DocumentCode :
1936437
Title :
Effects of interface oxide layer on HfO2 gate dielectrics [MISFETS]
Author :
Morisaki, Yusuke ; Sugita, Yoshihiro ; Irino, Kiyoshi ; Aoyama, Takayuki
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
2001
fDate :
1-2 Nov. 2001
Firstpage :
184
Lastpage :
187
Abstract :
We report on the nMISFETs (n-type metal-insulator-semiconductor field effect transistors) characteristics for the atomic layer chemical vapor deposition (ALCVD) HfO/sub 2/ gate stack and the behavior of the HfO/sub 2/ layer during annealing on various oxides.
Keywords :
CVD coatings; MISFET; annealing; dielectric thin films; hafnium compounds; semiconductor device measurement; ALCVD HfO/sub 2/ gate stack; HfO/sub 2/; HfO/sub 2/ gate dielectrics; annealing; atomic layer chemical vapor deposition; interface oxide layer; n-MISFETs; n-type metal-insulator-semiconductor field effect transistors; oxides; transistor characteristics; Annealing; Atomic layer deposition; Capacitance-voltage characteristics; Channel bank filters; Chemical analysis; Dielectrics; Hafnium oxide; Performance analysis; Performance evaluation; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
Type :
conf
DOI :
10.1109/IWGI.2001.967579
Filename :
967579
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1936437
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