Title :
Frequency Dependent CV Measurements of GaAs/AlGaAs Heterostructures
Author :
Berroth, M. ; Bosch, R. ; Hurm, V.
Author_Institution :
Fraunhofer Institut fuer Angewandte Festkoerperphysik, Eckerstr. 4, 7800 Freiburg, FRG
Abstract :
A procedure is described to determine the carrier density profile in the channel of a FET by evaluating S-parameters measured over a broad frequency range. Applying this method to GaAs/AlGaAs heterostructures, a frequency dispersion of the gate capacitance has been found, which is attributed to a parasitic conducting channel.
Keywords :
Capacitance measurement; Contact resistance; Electrical resistance measurement; FETs; Frequency dependence; Frequency measurement; Gallium arsenide; Parasitic capacitance; Schottky barriers; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
