Title :
Reduction of leakage current of crystallized Ta2O5 through substitution with TiO2
Author :
Salam, K.M.A. ; Konishi, H. ; Fukuda, H. ; Nomura, S.
Author_Institution :
Fac. of Eng., Muroran Inst. of Technol., Hokkaido, Japan
Abstract :
In this study, we investigate the influence of the addition of TiO/sub 2/ into Ta/sub 2/O/sub 5/ thin films at various composition formed by metalorganic decomposition (MOD). The effects of post-deposition rapid thermal annealing (RTA) temperature on the structural and electrical properties of Ta/sub 2/O/sub 5/-TiO/sub 2/ thin films were also analyzed.
Keywords :
crystal structure; dielectric thin films; leakage currents; liquid phase deposited coatings; rapid thermal annealing; tantalum compounds; titanium compounds; RTA temperature; Ta/sub 2/O/sub 5/ thin films; Ta/sub 2/O/sub 5/-TiO/sub 2/; Ta/sub 2/O/sub 5/-TiO/sub 2/ thin films; TiO/sub 2/; crystallized Ta/sub 2/O/sub 5/; electrical properties; leakage current; metalorganic decomposition; post-deposition rapid thermal annealing; structural properties; substitution; Crystallization; Dielectric loss measurement; Dielectric losses; Dielectric materials; Dielectrics and electrical insulation; Leakage current; Optical films; Temperature; Transistors; X-ray scattering;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967581
