Title :
Metalorganic chemical vapor deposited thin films of high-k La-oxides
Author :
Shimizu, Takashi ; Yamada, Hirotoshi ; Kurokawa, Akira ; Ishi, Kenichi ; Suzuki, Eiichi
Author_Institution :
Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
Abstract :
The purpose of this paper is to experimentally investigate thin films of high-k La-oxide deposited by the MOCVD method. We report the crystallization and chemical reactivity of the thin films with equivalent oxide thickness (EOT) of less than 9 nm for the first time.
Keywords :
MOCVD; crystallisation; dielectric thin films; lanthanum compounds; surface chemistry; 9 nm; La/sub 2/O/sub 3/; MOCVD; chemical reactivity; crystallization; equivalent oxide thickness; high-k La-oxides; metalorganic chemical vapor deposited thin-films; Capacitance-voltage characteristics; Chemicals; Dielectric constant; Dielectric thin films; MOCVD; Optical films; Oxidation; Semiconductor films; Sputtering; Temperature;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967582
