Title :
Rare earth metal oxide gate thin films prepared by e-beam deposition
Author :
Ohmi, S. ; Akama, Seiki ; Kikuchi, A. ; Kashiwagi, I. ; Ohshima, C. ; Taguchi, J. ; Yamamoto, H. ; Kobayashi, C. ; Sato, K. ; Takeda, M. ; Oshima, K. ; Ishiwara, H. ; Iwai, H.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
In this paper, we report the results of the examination of various rare earth oxides for future CMOS gate insulator applications. The electrical and physical characteristics of various rare earth metal oxides have been investigated. Most of the rare earth metal oxides showed excellent electrical properties and smooth surface especially, La/sub 2/O/sub 3./ Other materials such as Dy/sub 2/O/sub 3/ and Lu/sub 2/O/sub 3/ showed good electrical characteristics in terms of frequency dependence, however, it was found that it is necessary to obtain the optimum process conditions (deposition temperature, RTA temperature, RTA ambient etc.) for each rare earth oxide material.
Keywords :
MIS capacitors; electron beam deposition; energy gap; lattice energy; rapid thermal annealing; rare earth compounds; semiconductor-insulator boundaries; CMOS gate insulator applications; Dy/sub 2/O/sub 3/; La/sub 2/O/sub 3/; Lu/sub 2/O/sub 3/; MIS capacitor; MIS devices; RTA ambient; RTA temperature; Si; deposition temperature; e-beam deposition; electrical characteristics; frequency dependence; optimum process conditions; physical characteristics; rare earth metal oxide gate thin films; smooth surface; Atomic force microscopy; CMOS technology; Capacitance-voltage characteristics; Capacitors; High K dielectric materials; High-K gate dielectrics; Insulation; Leakage current; Sputtering; Voltage;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967583
