DocumentCode
1936631
Title
A Distribution Function of Injected Electrons in the Planar Doped Barrier Transistors
Author
Bannov, N.A. ; Svyatchenko, A.A.
Author_Institution
Institute of Microelectronics, Academy of Sciences of the USSR, Yaroslavl
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
611
Lastpage
614
Abstract
The injection properties of the planar doped barrier transistors (PDBT) at low temperature are investigated by means of numerical simulation. It is shown that due to the random distribution of the charged impurities electric field potential fluctuations may result in essential deviation of hot electrons injected from emitter into the base region from the direction normal to the layers of PDBT.
Keywords
Distribution functions; Electric potential; Electron beams; Electron emission; Fluctuations; Microelectronics; Numerical simulation; Potential energy; Semiconductor impurities; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436528
Link To Document