DocumentCode
1936752
Title
Impact of nitrogen incorporation in ultrathin SiO2 on the chemical and electronic structures of the SiO2/Si[100] interface
Author
Yamashita, H. ; Mizubayashi, W. ; Murakami, H. ; Miyazaki, S.
Author_Institution
Dept. of Electr. Eng., Hiroshima Univ., Japan
fYear
2001
fDate
1-2 Nov. 2001
Firstpage
224
Lastpage
225
Abstract
We have studied the chemical modification of ultrathin SiO/sub 2/ thermally-grown on Si[100], which is caused by annealing in NH/sub 3/ ambient, by using infrared attenuated total reflection (IR-ATR), X-ray photoelectron spectroscopy (XPS) and total photoelectron yield spectroscopy (PYS). We find that nitrogen incorporation with a few atomic percent in thermally-grown SiO/sub 2/ is very effective in reducing the built-in compressive stress near the SiO/sub 2//Si[100] interface.
Keywords
X-ray photoelectron spectra; annealing; doping profiles; elemental semiconductors; impurity states; interface states; interface structure; internal stresses; nitrogen; phonon spectra; semiconductor-insulator boundaries; silicon; silicon compounds; IR-ATR; NH/sub 3/; PYS; Si; SiO/sub 2//Si[100] interface electronic structure; SiO/sub 2//Si[100] interface structure; SiO/sub 2/:N-Si; X-ray photoelectron spectroscopy; XPS; annealing; built-in interface compressive stress reduction; chemical modification; infrared attenuated total reflection; nitrogen incorporation; thermally-grown ultrathin SiO/sub 2/; total photoelectron yield spectroscopy; Annealing; Atomic measurements; Bonding; Chemical engineering; Etching; Frequency; Furnaces; Nitrogen; Phonons; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-021-6
Type
conf
DOI
10.1109/IWGI.2001.967589
Filename
967589
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