• DocumentCode
    1936802
  • Title

    Fixed charge-induced mobility degradation and its recovery in MISFETs with Al2O3 gate dielectric

  • Author

    Torii, K. ; Shimamoto, Y. ; Saito, S. ; Obata, K. ; Yamauchi, T. ; Hisamoto, D. ; Yokoyama, N. ; Hiratani, M. ; Onai, T.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Japan
  • fYear
    2001
  • fDate
    1-2 Nov. 2001
  • Firstpage
    230
  • Lastpage
    232
  • Abstract
    Thin films with high dielectric constant (high-/spl kappa/) have been attracting much attention because of their potential use as alternative gate dielectrics for sub-100 nm MOSFETs. In this paper we investigated the nature of mobility degradation due to the fixed charge for Al/sub 2/O/sub 3/ high-/spl kappa/ gate dielectric. We successfully recovered the mobility to half that of SiO/sub 2/ without EOT increase by controlling the interfacial oxide thickness.
  • Keywords
    MISFET; alumina; carrier mobility; dielectric thin films; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ thin film; MISFET; carrier mobility; equivalent oxide thickness; fixed charge; high-/spl kappa/ gate dielectric; Annealing; Capacitance-voltage characteristics; Capacitors; Dielectric thin films; FETs; Hysteresis; MISFETs; Permittivity; Temperature; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-021-6
  • Type

    conf

  • DOI
    10.1109/IWGI.2001.967591
  • Filename
    967591
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936802