DocumentCode

1936875

Title

The Effect of Ion-Irradiation and Rapid Thermal Annealing on TiSie and MoSie

Author

Groberg, Leif ; Krontiras, Christos ; Saarilahti, Jaakko ; Suni, Ilkka

Author_Institution

Technical Research Centre of Finland Semiconductor Laboratory, Otakaari 7 B, SF-02150 Espoo, Finland

fYear

1987

fDate

14-17 Sept. 1987

Firstpage

209

Lastpage

212

Keywords

Amorphous materials; Conductivity; Laboratories; Physics; Rapid thermal annealing; Semiconductor films; Silicides; Silicon; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1987. ESSDERC '87. 17th European

Conference_Location

Bologna, Italy

Print_ISBN

0444704779

Type

conf

Filename

5436541