• DocumentCode
    1936900
  • Title

    Avoiding Lateral Diffusion of Dopants in n+/p+ Polycide Gates

  • Author

    Amm, D.T. ; Lévy, D. ; Paoli, Mario ; Delpech, P. ; D´Ouville, T. Ternisien ; Mingam, H. ; GÖltz, G.

  • Author_Institution
    Centre National d´´Etudes des Télécommunications, Chemin du Vieux Chêne, BP 98, 38243 MEYLAN Cedex, FRANCE.; Dept. of Physics, Queen´´s University, Kingston, Ontario, CANADA K7L 3N6
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    561
  • Lastpage
    564
  • Abstract
    The lateral diffusion of dopants in a TiSi2 salicide process was studied for various BPSG reflow RTP anneals. Lateral diffusion of arsenic was detected for anneals above 1000°C (20 sec.) whereas no boron diffusion could be observed for anneals up to 1060°C. A novel ``weakly doped gate´´ test structure proved to be a sensitive detector of lateral diffusion.
  • Keywords
    Annealing; Boron; CMOS technology; Detectors; MOS devices; MOSFET circuits; Temperature; Testing; Threshold voltage; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936900