Title :
Electrical Properties and Sputter-etched Induced Defects in Ti-W/Si Schottky Diodes
Author :
Bauza, D. ; Mallardeau, C. ; Morand, Y.
Author_Institution :
L.P.C.S., E.N.S.E.R.G., B.P. 257, 38016 Grenoble Cedex FRANCE.
Abstract :
Ti-W/Si (n type) Schottky diodecs which have been back-sputter etched prior to metal deposition are studied. It is found that the barrier height strongly depends on the etching conditions. Defects levels are measured usinig DLTS. Their characteristics are studied as function of the etching conditions.
Keywords :
Area measurement; Atomic measurements; Charge measurement; Current measurement; Electric variables measurement; Energy measurement; Pulse measurements; Q measurement; Schottky diodes; Sputter etching;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
