DocumentCode
1936940
Title
Electrical Properties and Sputter-etched Induced Defects in Ti-W/Si Schottky Diodes
Author
Bauza, D. ; Mallardeau, C. ; Morand, Y.
Author_Institution
L.P.C.S., E.N.S.E.R.G., B.P. 257, 38016 Grenoble Cedex FRANCE.
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
565
Lastpage
568
Abstract
Ti-W/Si (n type) Schottky diodecs which have been back-sputter etched prior to metal deposition are studied. It is found that the barrier height strongly depends on the etching conditions. Defects levels are measured usinig DLTS. Their characteristics are studied as function of the etching conditions.
Keywords
Area measurement; Atomic measurements; Charge measurement; Current measurement; Electric variables measurement; Energy measurement; Pulse measurements; Q measurement; Schottky diodes; Sputter etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436543
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