DocumentCode :
1936941
Title :
Vertical integration of spin dependent tunnel junction and amorphous Si diode for MRAM application
Author :
Sousa, R.C. ; Freitas, P.P. ; Chu, V. ; Conde, J.P.
Author_Institution :
INESC
fYear :
1999
fDate :
18-21 May 1999
Keywords :
Amorphous magnetic materials; Amorphous materials; Artificial intelligence; Current measurement; Electrical resistance measurement; Magnetic field measurement; Magnetic materials; Schottky diodes; Semiconductor diodes; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 1999. Digest of INTERMAG 99. 1999 IEEE International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-5555-5
Type :
conf
DOI :
10.1109/INTMAG.1999.837968
Filename :
837968
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1936941
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