DocumentCode
1936941
Title
Vertical integration of spin dependent tunnel junction and amorphous Si diode for MRAM application
Author
Sousa, R.C. ; Freitas, P.P. ; Chu, V. ; Conde, J.P.
Author_Institution
INESC
fYear
1999
fDate
18-21 May 1999
Keywords
Amorphous magnetic materials; Amorphous materials; Artificial intelligence; Current measurement; Electrical resistance measurement; Magnetic field measurement; Magnetic materials; Schottky diodes; Semiconductor diodes; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 1999. Digest of INTERMAG 99. 1999 IEEE International
Conference_Location
Kyongju, Korea
Print_ISBN
0-7803-5555-5
Type
conf
DOI
10.1109/INTMAG.1999.837968
Filename
837968
Link To Document