• DocumentCode
    1937065
  • Title

    Threshold voltage roll-off model for low power bulk accumulation MOSFETs

  • Author

    Austin, B.L. ; Tang, X. ; Meindl, J.D. ; Dennen, M. ; Richards, W.R.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    1998
  • fDate
    13-16 Sep 1998
  • Firstpage
    175
  • Lastpage
    179
  • Abstract
    A closed-form analytical threshold voltage roll-off model (ΔVT) for bulk accumulation MOSFETs, namely, buried channel accumulation (BCA) and surface channel accumulation (SCA), has been derived. Results show that scaling of BCA/SCA devices to the L=0.1 μm range while maintaining performance is feasible for devices with very shallow tubs and source/drain junctions. It is also observed that for such devices, the SGA ΔVT can be substantially smaller than the conventional surface channel inversion MOSFET ΔV T
  • Keywords
    MOSFET; electric potential; low-power electronics; semiconductor device models; 0.1 micron; buried channel accumulation; device scaling; low power bulk accumulation MOSFETs; surface channel accumulation; threshold voltage rolloff model; Boundary conditions; Contracts; Instruments; Laplace equations; MOSFETs; Neodymium; Poisson equations; Power engineering and energy; Power engineering computing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC Conference 1998. Proceedings. Eleventh Annual IEEE International
  • Conference_Location
    Rochester, NY
  • ISSN
    1063-0988
  • Print_ISBN
    0-7803-4980-6
  • Type

    conf

  • DOI
    10.1109/ASIC.1998.722889
  • Filename
    722889
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1937065