DocumentCode :
1937065
Title :
Threshold voltage roll-off model for low power bulk accumulation MOSFETs
Author :
Austin, B.L. ; Tang, X. ; Meindl, J.D. ; Dennen, M. ; Richards, W.R.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
1998
fDate :
13-16 Sep 1998
Firstpage :
175
Lastpage :
179
Abstract :
A closed-form analytical threshold voltage roll-off model (ΔVT) for bulk accumulation MOSFETs, namely, buried channel accumulation (BCA) and surface channel accumulation (SCA), has been derived. Results show that scaling of BCA/SCA devices to the L=0.1 μm range while maintaining performance is feasible for devices with very shallow tubs and source/drain junctions. It is also observed that for such devices, the SGA ΔVT can be substantially smaller than the conventional surface channel inversion MOSFET ΔV T
Keywords :
MOSFET; electric potential; low-power electronics; semiconductor device models; 0.1 micron; buried channel accumulation; device scaling; low power bulk accumulation MOSFETs; surface channel accumulation; threshold voltage rolloff model; Boundary conditions; Contracts; Instruments; Laplace equations; MOSFETs; Neodymium; Poisson equations; Power engineering and energy; Power engineering computing; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC Conference 1998. Proceedings. Eleventh Annual IEEE International
Conference_Location :
Rochester, NY
ISSN :
1063-0988
Print_ISBN :
0-7803-4980-6
Type :
conf
DOI :
10.1109/ASIC.1998.722889
Filename :
722889
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1937065
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