DocumentCode
1937105
Title
A Model for Oxygen Phase Transition Kinetics in CZ Grown Silicon and its Applications to IC Processes
Author
Pagani, M. ; Huber, W.
Author_Institution
Dynamit Nobel Silicon SpA, 28100 Novara, Italy
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
339
Lastpage
342
Abstract
A model for oxygen precipitation in silicon at high temperatures has been developed and tested succesfully on different low-high treatment. The model was then extended to multistep treatments and tested on CMOS/NMOS processes simulations; trends are correctly predicted.
Keywords
Application specific integrated circuits; CMOS process; Integrated circuit modeling; Kinetic theory; Oxygen; Predictive models; Semiconductor device modeling; Silicon; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436550
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