DocumentCode
1937155
Title
Al/TiN/TiSi2 Contacts to Ultra Shallow Junctions
Author
Ling, E. ; Gamble, H.S. ; Armstrong, B.M. ; Montgomery, J.H.
Author_Institution
Department of Electrical and Electronic Engineering, Queen´´s University of Belfast, Ashby Building, Belfast BT9 5AH N. Ireland
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
205
Lastpage
208
Abstract
Processes for the production of reliable aluminium contacts to 110nM junctions are described. In the case of P+-N junctions the temperature-time cycles have been reduced to minimise redistribution of the boron impurities. A plasma enhanced rapid thermal processor has been employed.
Keywords
Aluminum; Annealing; Boron; Contacts; Silicon; Surface resistance; Temperature; Thermal resistance; Tin; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436553
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