Continuous compact model for MuGFETs simulations

This work presents an analytical continuous compact model for FinFETs which is based on the doped symmetrical double gate model. Our model covers a wide range of technological parameters including different doping concentrations from 1 times 10¹⁴ to 3 times 10¹⁸ cm^-3, short channel effects (down to 80 nm) and high temperatures (up to 200degC). Recently, we have also implemented and validated it in a Verilog-A module. Good agreements between device measurements and simulations have been obtained in all operation regions and at different temperatures.