• DocumentCode
    1937410
  • Title

    Gradual degradation under RF overdrive of MESFETs and PHEMTs

  • Author

    Hwang, J.C.M.

  • Author_Institution
    Lehigh Univ., Bethlehem, PA, USA
  • fYear
    1995
  • fDate
    Oct. 29 1995-Nov. 1 1995
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    This paper is based on a narrative summary and discussion of a number of referenced investigations concerning the gradual degradation under RF overdrive of MESFETs and PHEMTs. After introducing the background of the problem, its mechanism, models, analysis, as well as potential solutions are discussed.
  • Keywords
    Schottky gate field effect transistors; UHF field effect transistors; electric breakdown; electron traps; failure analysis; high electron mobility transistors; hot carriers; semiconductor device models; semiconductor device reliability; GaAs; MESFETs; PHEMTs; RF overdrive; gradual degradation; models; pseudomorphic HEMT; Degradation; Electron traps; Gallium arsenide; MESFETs; PHEMTs; Passivation; Radio frequency; Silicon compounds; Stress; Surface resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    0-7803-2966-X
  • Type

    conf

  • DOI
    10.1109/GAAS.1995.528966
  • Filename
    528966
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1937410