Title :
Gradual degradation under RF overdrive of MESFETs and PHEMTs
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
This paper is based on a narrative summary and discussion of a number of referenced investigations concerning the gradual degradation under RF overdrive of MESFETs and PHEMTs. After introducing the background of the problem, its mechanism, models, analysis, as well as potential solutions are discussed.
Keywords :
Schottky gate field effect transistors; UHF field effect transistors; electric breakdown; electron traps; failure analysis; high electron mobility transistors; hot carriers; semiconductor device models; semiconductor device reliability; GaAs; MESFETs; PHEMTs; RF overdrive; gradual degradation; models; pseudomorphic HEMT; Degradation; Electron traps; Gallium arsenide; MESFETs; PHEMTs; Passivation; Radio frequency; Silicon compounds; Stress; Surface resistance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528966
