Title :
Effect of Velocity Saturation on Small Signal Behaviour of Submicron MOSFETs: Analytical Modelling and 2-D Simulations
Author_Institution :
Eindhoven University of Technology, Faculty of Electrical Engineering, P.O. Box 513, 5600 MB Eindhoven, the Netherlands
Abstract :
In short channel MOSFETs the effect of carrier velocity saturation becomes increasingly important. This paper concentrates on its effect on the small signal behaviour. An analytical model, which is compared with 2D simulations for a wide frequency range and quasi-static measurements, shows an important influence on the If and hf behaviour.
Keywords :
Admittance measurement; Analytical models; Coupled mode analysis; Differential equations; Frequency; MOSFETs; Partial differential equations; Q measurement; Signal analysis; Two dimensional displays;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
