Title :
An Analytical Model for the Vertical Insulated Gate Bipolar Transistor
Author :
Grahn, K. ; Eränen, S.
Author_Institution :
Semiconductor Laboratory, Technical Research Centre of Finland
Abstract :
An analytical steady-state model has been developed for the vertical IGBT. Effects like conductivity modulation, collector bias variations, emitter injection efficiency, recombination and channel conductance are included. Simulated results are in good agreement with measured characteristics for a 1000V IGBT device.
Keywords :
Analytical models; Charge carrier processes; Electron emission; Electron mobility; Epitaxial layers; Equations; Insulated gate bipolar transistors; Predictive models; Steady-state; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
