DocumentCode
1937588
Title
An Analytical Model for the Vertical Insulated Gate Bipolar Transistor
Author
Grahn, K. ; Eränen, S.
Author_Institution
Semiconductor Laboratory, Technical Research Centre of Finland
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
431
Lastpage
434
Abstract
An analytical steady-state model has been developed for the vertical IGBT. Effects like conductivity modulation, collector bias variations, emitter injection efficiency, recombination and channel conductance are included. Simulated results are in good agreement with measured characteristics for a 1000V IGBT device.
Keywords
Analytical models; Charge carrier processes; Electron emission; Electron mobility; Epitaxial layers; Equations; Insulated gate bipolar transistors; Predictive models; Steady-state; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436576
Link To Document