Title :
Design tradeoffs among MCM-C, MCM-D and MCM-D/C technologies
Author :
Iqbal, Asif ; Swaminathan, Madhavan ; Nealon, Michael ; Omer, Ahmed
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
Abstract :
Design tradeoffs in electrical performance, wiring density and cost for MCM-C, MCM-D and MCM-D/C technologies are described. MCM-C includes cofired alumina (AlO) substate using molybdenum metallization and cofired glass-ceramic (GC) substrate using copper metallization. MCM-D technology options include a 2-level (coplanar) and a 4-level (triplate) structures utilizing copper in polyimide. MCM-D/C comprises the hybrid of the aforementioned thin and thick film technologies leading to 3, 4 and 5-level thin film options on top of cofired ceramic substrates. The thin film technologies presented represent a range of ground-rule complexity from 25-μm to 100-μm pitch. It is concluded that the choice of a particular MCM technology should be application-specific in terms of its cost, performance and wiring density tradeoffs
Keywords :
design engineering; multichip modules; thin film circuits; Cu metallisation; MCM-C technology; MCM-D technology; MCM-D/C technology; Mo metallisation; cofired Al2O3 substrate; cofired ceramic substrates; coplanar structure; design tradeoff; electrical performance; glass-ceramic substrate; ground-rule complexity; hybrid technology; polyimide; thick film technologies; thin film technology; triplate structure; wiring density; Cost function; Design optimization; Packaging machines; Paper technology; Polyimides; Semiconductor devices; Substrates; Thick films; Transistors; Wiring;
Conference_Titel :
Multi-Chip Module Conference, 1993. MCMC-93, Proceedings., 1993 IEEE
Conference_Location :
Santa Cruz, CA
Print_ISBN :
0-8186-3540-1
DOI :
10.1109/MCMC.1993.302159
