A highly manufacturable 0.2 /spl mu/m AlGaAs/InGaAs PHEMT fabricated using the single-layer integrated-metal FET (SLIMFET) process

Author

Havasy, C.K. ; Quach, T.K. ; Bozada, C.A. ; DeSalvo, G.C. ; Dettmer, R.W. ; Ebel, J.L. ; Gillespie, J.K. ; Nakano, K. ; Via, G.D.

Author_Institution

Wright Res. & Dev. Center, Wright-Patterson AFB, OH, USA

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

89

Lastpage

92

Abstract

This work is the development of a single-layer integrated-metal field effect transistor (SLIMFET) process for a high performance 0.2 /spl mu/m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT). This process is compatible with MMIC fabrication and minimizes process variations, cycle time, and cost. This process uses non-alloyed ohmic contacts, a selective gate-recess etching process, and a single gate/source/drain metal deposition step to form both Schottky and ohmic contacts at the same time.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device metallisation; semiconductor technology; 0.2 micron; AlGaAs-InGaAs; PHEMT; SLIMFET process; Schottky contacts; cost; cycle time; fabrication; nonalloyed ohmic contacts; process variations; pseudomorphic high electron mobility transistor; selective gate-recess etching; single gate/source/drain metal deposition; single-layer integrated-metal field effect transistor; Electron mobility; FETs; Fabrication; Field effect MMICs; HEMTs; Indium gallium arsenide; MODFETs; Manufacturing; Ohmic contacts; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528968

Filename

528968