DocumentCode :
1938253
Title :
A Consistent Pair-diffusion Based Steady-state Model for Phosphorus Diffusion
Author :
Dürr, R. ; Pichler, P.
Author_Institution :
Lehrstuhl fÿr Elektronische Bauelemente, Universitÿt Erlangen-Nÿrnberg, Artilleriestrasse 12, D-8520 Erlangen, BRD
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
297
Lastpage :
301
Abstract :
A simplified model for phosphorus diffusion has been developed. Assuming dopant diffusion to proceed by impurity-point defect pairs, the complete system of coupled partial differential equations describing both reaction kinetics and diffusion has been consistently simplified. The resulting equations are solved numerically. Important features of phosphorus diffusion arise naturally from the solution.
Keywords :
Differential equations; Electrostatic analysis; Kinetic theory; Partial differential equations; Semiconductor process modeling; Silicon; Steady-state; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436606
Link To Document :
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