Title :
Field effect and photoconductivity in epitaxial layer of N- and P-CdHgTe
Author :
Jartsev, Andrew V.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
Abstract :
Photoconductivity in MBE p-HgCdTe/GaAs films is studied in voltage bias range -5 to +5 V and n-HgCdTe/GaAs in range -3 to +3 V at 77 K. The mechanisms, explanatory observed curves are proposed. The field effect in p and n-HgCdTe are observed. The influence of surface relief on surface conductivity is detected.
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; gallium arsenide; mercury compounds; photoconductivity; semiconductor epitaxial layers; surface conductivity; -3 to 3 V; -5 to 5 V; 77 K; HgCdTe-GaAs; HgCdTe-GaAs films; MBE; epitaxial layer; field effect; photoconductivity; surface conductivity; voltage biasing; Cadmium compounds; Conductivity; Gallium compounds; Mercury compounds; Photoconductivity; Semiconductor epitaxial layers;
Conference_Titel :
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN :
5-7782-0463-9
DOI :
10.1109/PESC.2004.241045
