DocumentCode
1938487
Title
Multi-peak resonant tunneling diodes based fuzzifiers
Author
Tang, Hao ; Lin, Hung Chang ; Wei, Sen Jung
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fYear
1994
fDate
25-27 May 1994
Firstpage
156
Lastpage
161
Abstract
In contrast to conventional CMOS and bipolar implementations for fuzzifier hardwares, the newly proposed fuzzifier circuits take advantage of the unique folding characteristic of one class of quantum well device, namely, the resonant tunneling diode (RTD). Three different types of RTD based fuzzifiers are proposed depending on the kinds of intrinsic I-V characteristics available. For fuzzy logic purposes, the multi-peaked RTD I-V characteristics can be generally classified as triangular, sawtooth and hysteretic types. The speed of operation, i.e. fuzzy logic inference per second (FLIPS) is expected to be high, and circuit complexity is reduced with respect to previously proposed fuzzifier circuits using conventional devices such as CMOS
Keywords
computational complexity; fuzzy logic; inference mechanisms; resonant tunnelling devices; tunnel diodes; circuit complexity; folding characteristic; fuzzy logic; fuzzy logic inference per second; hysteretic; intrinsic I-V characteristics; quantum well device; resonant tunneling diodes based fuzzifiers; CMOS technology; Circuits; Complexity theory; Current measurement; Diodes; Educational institutions; Fuzzy logic; Hardware; Hysteresis; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Multiple-Valued Logic, 1994. Proceedings., Twenty-Fourth International Symposium on
Conference_Location
Boston, MA
Print_ISBN
0-8186-5650-6
Type
conf
DOI
10.1109/ISMVL.1994.302211
Filename
302211
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