• DocumentCode
    1938487
  • Title

    Multi-peak resonant tunneling diodes based fuzzifiers

  • Author

    Tang, Hao ; Lin, Hung Chang ; Wei, Sen Jung

  • Author_Institution
    Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
  • fYear
    1994
  • fDate
    25-27 May 1994
  • Firstpage
    156
  • Lastpage
    161
  • Abstract
    In contrast to conventional CMOS and bipolar implementations for fuzzifier hardwares, the newly proposed fuzzifier circuits take advantage of the unique folding characteristic of one class of quantum well device, namely, the resonant tunneling diode (RTD). Three different types of RTD based fuzzifiers are proposed depending on the kinds of intrinsic I-V characteristics available. For fuzzy logic purposes, the multi-peaked RTD I-V characteristics can be generally classified as triangular, sawtooth and hysteretic types. The speed of operation, i.e. fuzzy logic inference per second (FLIPS) is expected to be high, and circuit complexity is reduced with respect to previously proposed fuzzifier circuits using conventional devices such as CMOS
  • Keywords
    computational complexity; fuzzy logic; inference mechanisms; resonant tunnelling devices; tunnel diodes; circuit complexity; folding characteristic; fuzzy logic; fuzzy logic inference per second; hysteretic; intrinsic I-V characteristics; quantum well device; resonant tunneling diodes based fuzzifiers; CMOS technology; Circuits; Complexity theory; Current measurement; Diodes; Educational institutions; Fuzzy logic; Hardware; Hysteresis; Resonant tunneling devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multiple-Valued Logic, 1994. Proceedings., Twenty-Fourth International Symposium on
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-8186-5650-6
  • Type

    conf

  • DOI
    10.1109/ISMVL.1994.302211
  • Filename
    302211