Adatom potential relief on Si (111) - 7×7 surface

Simulation of Adatom potential relief on Si (111) - 7×7 surface was carried out using Tersoff potential. Positions of adatom localization on reconstructed surface were determined. Three absolute energy minimums are found around each rest atom of the height H₁=2.3 Å over lower monolayer of upper bilayer. Energy barriers of diffusion hops have been estimated: for hops around rest atom 0.75 eV, for hops from one rest atom to neighbor rest-atom 1.25 eV and for transition from one half-cell to the other 1.75 eV.