• DocumentCode
    1938577
  • Title

    Simulation of CMOS inverter with the help of TCAD ISE package

  • Author

    Vorogeykin ; Makarov, Eugene A.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • fYear
    2004
  • fDate
    1-5 July 2004
  • Firstpage
    71
  • Lastpage
    73
  • Abstract
    The simulation of transient CMOS inverter with side dielectric isolation by shallow trenches is carried out. It is shown that tightening of a switching input pulse front reduces in the unclosing of the second transistor and the course of a padding current through the inverter.
  • Keywords
    MOSFET; invertors; isolation technology; semiconductor device models; MOS transistor; TCAD ISE package; dielectric isolation technology; padding current; switching pulse; transient CMOS inverter; Inverters; Isolation technology; MOSFETs; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
  • Print_ISBN
    5-7782-0463-9
  • Type

    conf

  • DOI
    10.1109/PESC.2004.241075
  • Filename
    1358295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1938577