Realization of the principle of additional wall in thermal stream semiconductor sensor

The operation of thermal stream semiconductor sensor is devoted to betterment, designed structures and consists in calculation of thermal fields at effect on structure different thermal loads. The first idea of measuring was, that the thermal stream dropped on a perceived platform, created in structure a gradient of temperatures, which then is conversed by a sensitive element to an electrical signal. In this case, during measuring a thermal flow, the sensor, at the expense of major thermal resistance, imported contortions to character of allocation of a thermal stream. Using polysilicon mesa structures allows to ensure better electrical insulation between separate thermoelectric couples.