DocumentCode :
1938652
Title :
Experimental study of the ground plane in asymmetric coupled silicon lines
Author :
Arz, Uwe ; Williams, Dylan F. ; Grabinski, Hartmut
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fYear :
2001
fDate :
2001
Firstpage :
317
Lastpage :
320
Abstract :
We use a measurement method designed for coupled lines on highly conductive substrates to characterize identical asymmetric coupled lines fabricated on lossy silicon with and without a metallization plane beneath the two signal conductors. The study illustrates the important role of the return path in determining the electromagnetic coupling between the lines
Keywords :
coupled transmission lines; electromagnetic coupling; elemental semiconductors; high-frequency transmission line measurement; metallisation; microstrip lines; silicon; Si; asymmetric coupled microstrip lines; conductive substrate; electromagnetic coupling; ground plane; lossy silicon; measurement method; metallization plane; return path; signal conductor; Capacitance; Conductors; Electrical resistance measurement; Electromagnetic measurements; Frequency; Loss measurement; Metallization; Microstrip; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Performance of Electronic Packaging, 2001
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-7024-4
Type :
conf
DOI :
10.1109/EPEP.2001.967672
Filename :
967672
Link To Document :
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