Modeling of the SOI structures in layers of amorphous silicon using the ISE TCAD

Author

Agapov, Aleksey M.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

fYear

2004

fDate

1-5 July 2004

Firstpage

81

Lastpage

82

Abstract

Modeling of the process flow of silicon on insulator (SOI) structure was implemented. The electrical data for the recrystallized and amorphous layers of silicon were received by ISE TCAD and compared with the experimental results. The calculated surface resistance in the set points of structure was determined. The obtained results of carrier mobility have allowed to estimate an acceptability and accuracy of the theoretical models incorporated in software package ISE TCAD.

Keywords

amorphous semiconductors; carrier mobility; elemental semiconductors; recrystallisation; semiconductor process modelling; silicon-on-insulator; surface resistance; technology CAD (electronics); ISE TCAD; SOI structures; Si-SiO₂; amorphous silicon layers; carrier mobility; process flow modeling; recrystallization; silicon on insulator; software package; surface resistance; Amorphous semiconductors; Charge carrier mobility; Semiconductor process modeling; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on

Print_ISBN

5-7782-0463-9

Type

conf

DOI

10.1109/PESC.2004.241079

Filename

1358299