Title :
III-V/silicon first order distributed feedback lasers integrated on SOI waveguide circuits
Author :
Keyvaninia, S. ; Verstuyft, S. ; Van Landschoot, L. ; Van Thourhout, Dries ; Roelkens, Gunther ; Duan, Guang-Hua ; Lelarge, F. ; Fedeli, J.-M. ; Messaoudene, S. ; de Vries, T. ; Geluk, E.J. ; Smalbrugge, B. ; Smit, Meint
Author_Institution :
Photonics Res. Group, Ghent Univ., Ghent, Belgium
Abstract :
Heterogeneously integrated III-V-on-silicon first order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel design exploiting high confinement in the active waveguide is demonstrated. 5 mW output power coupled to a silicon waveguide, 40 dB side mode suppression ratio and continuous wave operation up to 60°C is obtained.
Keywords :
III-V semiconductors; distributed feedback lasers; elemental semiconductors; integrated optoelectronics; laser modes; quantum well lasers; silicon; silicon-on-insulator; wafer bonding; waveguide lasers; 40 dB side mode suppression ratio; SOI waveguide circuits; Si; active waveguide; continuous wave operation; heterogeneously integrated III-V-on-silicon first order distributed feedback lasers; output power; power 5 mW; silicon waveguide; ultrathin DVS-BCB die-to-wafer bonding process;
Conference_Titel :
Optical Communication (ECOC 2013), 39th European Conference and Exhibition on
Conference_Location :
London
Electronic_ISBN :
978-1-84919-759-5
DOI :
10.1049/cp.2013.1306
