DocumentCode
1939003
Title
Low threshold CW lasing in photo-pumped GaInAsP microdisk lasers
Author
Fujita, M. ; Teshima, K. ; Baba, T.
Author_Institution
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
We demonstrate photo-pumped GaInAsP microdisk lasers. The minimum threshold pump power is as low as /spl sim/ 20 /spl mu/W at room temperature under CW condition.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; microdisc lasers; optical pumping; quantum well lasers; 20 muW; GaInAsP; ICP etching; compressively-strained QW; heat sinking structures; high gain wavelength range; low scattering loss; low threshold CW lasing; minimum threshold pump power; photo-pumped microdisk lasers; room temperature; Laser excitation; Laser modes; Optical pumping; Power lasers; Pump lasers; Spontaneous emission; Stimulated emission; Surface emitting lasers; Thermal resistance; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967701
Filename
967701
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