• DocumentCode
    1939009
  • Title

    Sub 10-nm accuracy in positioning plasmonic nanostructures on self-assembled GaAs quantum dots

  • Author

    Lindfors, K. ; Pfeiffer, Michael ; Fenk, B. ; Phillipp, F. ; Atkinson, Peter M. ; Rastelli, A. ; Schmidt, Oliver G. ; Giessen, H. ; Lippitz, M.

  • Author_Institution
    Max Planck Inst. for Solid State Res., Stuttgart, Germany
  • fYear
    2013
  • fDate
    12-16 May 2013
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Here we describe a technique which allows us to fabricate nanostructures positioned with respect to single GaAs quantum dots with an accuracy of better than 10 nm.
  • Keywords
    III-V semiconductors; gallium arsenide; nanofabrication; nanopositioning; nanostructured materials; plasmonics; self-assembly; semiconductor quantum dots; GaAs; plasmonic nanostructures; positioning; self-assembled quantum dots; single GaAs quantum dots; sub 10-nm accuracy; Accuracy; Nanostructures; Optical device fabrication; Optical polarization; Plasmons; Quantum dots; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4799-0593-5
  • Type

    conf

  • DOI
    10.1109/CLEOE-IQEC.2013.6801898
  • Filename
    6801898