DocumentCode
1939009
Title
Sub 10-nm accuracy in positioning plasmonic nanostructures on self-assembled GaAs quantum dots
Author
Lindfors, K. ; Pfeiffer, Michael ; Fenk, B. ; Phillipp, F. ; Atkinson, Peter M. ; Rastelli, A. ; Schmidt, Oliver G. ; Giessen, H. ; Lippitz, M.
Author_Institution
Max Planck Inst. for Solid State Res., Stuttgart, Germany
fYear
2013
fDate
12-16 May 2013
Firstpage
1
Lastpage
1
Abstract
Here we describe a technique which allows us to fabricate nanostructures positioned with respect to single GaAs quantum dots with an accuracy of better than 10 nm.
Keywords
III-V semiconductors; gallium arsenide; nanofabrication; nanopositioning; nanostructured materials; plasmonics; self-assembly; semiconductor quantum dots; GaAs; plasmonic nanostructures; positioning; self-assembled quantum dots; single GaAs quantum dots; sub 10-nm accuracy; Accuracy; Nanostructures; Optical device fabrication; Optical polarization; Plasmons; Quantum dots; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location
Munich
Print_ISBN
978-1-4799-0593-5
Type
conf
DOI
10.1109/CLEOE-IQEC.2013.6801898
Filename
6801898
Link To Document