High Speed BICMOS Technology Emitter-base Self-aligned Structure

Recently we have developed a high performance BiCMOS technology, which is a composition of double polysilicon emitter-base self-aligned bipolar and 0.8 ¿m gate CMOS. With this proces, 15 GHz cut-off frequency (f¿) of bipolar transistor and 60 pS of ECL basic delay time (tpd) at Ics = 1 mA have been achieved. For the BiCMOS gate, 220 pS of basic delay time and 325 pS of delay time with 0.5 pF load capacitance have been obtained.