Title :
High-temperature silicon carbide and silicon on insulator based integrated power modules
Author :
Lostetter, A. ; Hornberger, J. ; McPherson, Brice ; Reese, B. ; Shaw, R. ; Schupbach, M. ; Rowden, B. ; Mantooth, Alan ; Balda, J. ; Otsuka, T. ; Okumura, K. ; Miura, M.
Author_Institution :
Arkansas Power Electron. Int., Inc., Fayetteville, AR, USA
Abstract :
This paper presents the challenges and results of fabricating a high temperature silicon carbide based integrated power module. The gate driver for the module was integrated into the power package and is rated for an ambient temperature of 250degC. The power module was tested up to 300 V bus voltage, 160 A peak current, and 250degC junction temperature.
Keywords :
high-temperature electronics; power semiconductor devices; silicon compounds; silicon-on-insulator; SiC; current 160 A; gate driver; high-temperature silicon carbide; integrated power modules; silicon on insulator; temperature 250 degC; voltage 300 V; Amplitude shift keying; Insulation; Multichip modules; Packaging; Power electronics; Silicon carbide; Silicon on insulator technology; Temperature control; Testing; Threshold voltage; SiC; high temperature; silicon carbide;
Conference_Titel :
Vehicle Power and Propulsion Conference, 2009. VPPC '09. IEEE
Conference_Location :
Dearborn, MI
Print_ISBN :
978-1-4244-2600-3
Electronic_ISBN :
978-1-4244-2601-0
DOI :
10.1109/VPPC.2009.5289735
