DocumentCode
1939210
Title
High-temperature silicon carbide and silicon on insulator based integrated power modules
Author
Lostetter, A. ; Hornberger, J. ; McPherson, Brice ; Reese, B. ; Shaw, R. ; Schupbach, M. ; Rowden, B. ; Mantooth, Alan ; Balda, J. ; Otsuka, T. ; Okumura, K. ; Miura, M.
Author_Institution
Arkansas Power Electron. Int., Inc., Fayetteville, AR, USA
fYear
2009
fDate
7-10 Sept. 2009
Firstpage
1032
Lastpage
1035
Abstract
This paper presents the challenges and results of fabricating a high temperature silicon carbide based integrated power module. The gate driver for the module was integrated into the power package and is rated for an ambient temperature of 250degC. The power module was tested up to 300 V bus voltage, 160 A peak current, and 250degC junction temperature.
Keywords
high-temperature electronics; power semiconductor devices; silicon compounds; silicon-on-insulator; SiC; current 160 A; gate driver; high-temperature silicon carbide; integrated power modules; silicon on insulator; temperature 250 degC; voltage 300 V; Amplitude shift keying; Insulation; Multichip modules; Packaging; Power electronics; Silicon carbide; Silicon on insulator technology; Temperature control; Testing; Threshold voltage; SiC; high temperature; silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Vehicle Power and Propulsion Conference, 2009. VPPC '09. IEEE
Conference_Location
Dearborn, MI
Print_ISBN
978-1-4244-2600-3
Electronic_ISBN
978-1-4244-2601-0
Type
conf
DOI
10.1109/VPPC.2009.5289735
Filename
5289735
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