DocumentCode
1939216
Title
XPSim: a MOS VLSI simulator
Author
Bauer, R.L. ; Jiayuan Fang ; Ng, A.P.-C. ; Brayton, R.K.
Author_Institution
Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
1988
fDate
7-10 Nov. 1988
Firstpage
66
Lastpage
69
Abstract
XPSim (formerly known as SuperCrystal), a multirate, event-driven circuit simulator suitable for large MOS VLSI circuits, is described. XPSim incorporates both static and dynamic partitioning of the circuit. Each partitioned subcircuit is numerically solved with a new integration method-the exponential function method. The voltage waveforms produced by this method are piecewise exponentials. Currently, XPSim supports up to a third-order explicit method. Preliminary tests indicate that XPSim exhibits a significant speedup over SPICE while retaining similar accuracy and is able to handle large circuits.<>
Keywords
MOS integrated circuits; VLSI; circuit CAD; circuit analysis computing; digital simulation; MOS VLSI simulator; SuperCrystal; XPSim; dynamic partitioning; event-driven circuit simulator; exponential function method; integration; large circuits; partitioned subcircuit; piecewise exponentials; third-order explicit method; voltage waveforms; Circuit simulation; Computational modeling; MOS capacitors; MOSFETs; Resistors; SPICE; Scheduling; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 1988. ICCAD-88. Digest of Technical Papers., IEEE International Conference on
Conference_Location
Santa Clara, CA, USA
Print_ISBN
0-8186-0869-2
Type
conf
DOI
10.1109/ICCAD.1988.122464
Filename
122464
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