Large diameter III-V substrates-current issues and perspective

Author

Sawada, S. ; Oida, K. ; Miyajima, H. ; Nambu, K. ; Nakai, R. ; Tatsumi, M. ; Fujita, K. ; Nishida, Y.

Author_Institution

Sumitomo Electr. Ind. Ltd., Hyogo, Japan

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

115

Lastpage

118

Abstract

This paper presents prospects for the future market, availability and cost of 6 in. diam. GaAs substrates from a substrate supplier´s point of view. Outlining the challenges to the substrate supplier, we discuss the current issues and the future potential of production technologies (crystal growth, annealing, and wafer processing) for 6 in. diam. GaAs substrates, and mention current issues for 3 in. diam. InP substrates. In addition, we introduce 6 in. diam. GaAs and 3 in. diam. InP crystals grown by the VCZ method, which is a promising technology for the production of large substrates for multimedia devices.

Keywords

III-V semiconductors; annealing; crystal growth from melt; gallium arsenide; indium compounds; semiconductor technology; substrates; 3 in; 6 in; GaAs; InP; VCZ method; annealing; crystal growth; large diameter III-V substrates; multimedia devices; production technologies; wafer processing; Annealing; Cellular phones; Costs; Crystals; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Investments; MMICs; Production;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528974

Filename

528974