• DocumentCode
    1939630
  • Title

    STACMOS: A Basic 3-Dimensional CMOS Process

  • Author

    Buchner, R. ; Haberger, K. ; Seegebrecht, P. ; Panish, P.

  • Author_Institution
    Fraunhofer Institut fur Festkörpertechnologie, Paul-Gerhardt-Allee 42, D-8000 Munich 60, West Germany
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    395
  • Lastpage
    398
  • Abstract
    MOS Transistors have been fabricated in two independent active device layers, the second of which has been formed through laser recrystallization of a thin polysilicon layer. The effect of the fabrication process on the devices in the silicon substrate has been investigated and characterized through electrical measurements.
  • Keywords
    Argon; CMOS process; Circuits; Etching; MOS devices; Planarization; Silicon; Substrates; Surface topography; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1939630