Title :
Total ionizing dose effects and reliability of graphene-based non-volatile memory devices
Author :
Zhang, Cher Xuan ; Zhang, En Xia ; Fleetwood, Daniel M. ; Alles, Michael L. ; Schrimpf, Ronald D. ; Song, Emil B. ; Galatsis, Kosmas ; Newaz, A.K.M. ; Bolotin, Kirill I.
Author_Institution :
Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN 37235, USA
Abstract :
We discuss total ionizing dose effects and reliability of graphene-based electronics and non-volatile memory devices. The degradation after radiation exposure of these structures derives primarily from surface oxygen adsorption. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant degradation of the performance.
Keywords :
Annealing; Degradation; Gases; Graphene; Logic gates; Nonvolatile memory; Radiation effects;
Conference_Titel :
Aerospace Conference, 2013 IEEE
Conference_Location :
Big Sky, MT
Print_ISBN :
978-1-4673-1812-9
DOI :
10.1109/AERO.2013.6497396
