• DocumentCode
    1940553
  • Title

    Electroless Ni/Pd/Au plating for semiconductor package substrates-effect of gold plating combinations on gold wire bonding reliability

  • Author

    Ejiri, Yoshinori ; Sakurai, Takehisa ; Arayama, Yoshinori ; Tsubomatsu, Yoshiaki ; Hatakeyama, Shuuichi ; Arike, Shigeharu ; Hiroyama, Yukihisa ; Hasegawa, Kiyoshi

  • Author_Institution
    Hitachi Chem. Co., Ltd., Chikusei, Japan
  • fYear
    2010
  • fDate
    24-26 Aug. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In order to investigate the root causes of the good wire bonding reliability in electroless Ni/Pd/Au plating (ENEPIGEG), the wire bonding reliability of the combinations with electrolytic and electroless processes were evaluated. The reliability of ENEPIGEG and electrolytic Ni (SB-Watt)/IGEG were equivalent to that of the conventional electrolytic Ni (SB-Watt)/electrolytic Au and were excellent. The reliability of electrolytic Ni (SB-Watt)/IGEG was higher than that of EN/Electrolytic Au after heat treatment. We found that the grain size of the gold deposit coordinated with the grain size of the underplated Ni deposit with the epitaxial crystal growth. The large grain size of the gold deposit decreased the grain boundary of the gold deposit and reduced the grain boundary diffusion from the underplated metals onto the gold plating. We concluded that the wire bonding reliability after heat treatment depended on the diffusion behavior of the underplated metals and the grain size of the gold deposit.
  • Keywords
    crystal growth; electroless deposition; electronics packaging; electroplating; gold; grain boundaries; grain size; heat treatment; lead bonding; nickel; palladium; ENEPIGEG; Ni-Pd-Au; electroless Ni/Pd/Au plating; electroless process; electrolytic process; epitaxial crystal growth; gold plating; gold wire bonding reliability; grain boundary diffusion; grain size; heat treatment; semiconductor package substrates-effect; Bonding; Copper; Gold; Grain size; Nickel; Reliability; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CPMT Symposium Japan, 2010 IEEE
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-7593-3
  • Type

    conf

  • DOI
    10.1109/CPMTSYMPJ.2010.5680369
  • Filename
    5680369