DocumentCode
1940598
Title
Performance improvement of silicon micro-cavity modulators by iteration of the p-i-n intrinsic region width
Author
Al-Saadi, Aws ; Franke, Bulent Andreas ; Kupijai, Sebastian ; Theiss, Christoph ; Rhee, Hanjo ; Mahdi, Samira ; Zimmermann, L. ; Stolarek, David ; Richter, H.H. ; Eichler, Hans Joachim ; Woggon, Ulrike ; Meister, S.
Author_Institution
Inst. fur Opt. und Atomare Phys., Tech. Univ. Berlin, Berlin, Germany
fYear
2013
fDate
22-26 Sept. 2013
Firstpage
1
Lastpage
3
Abstract
The distance between the p+- and n+-doped regions of the p-i-n diode in micro-cavity modulators represents a compromise between speed and loss. We varied the intrinsic region width to determine the influence on the modulator properties through simulations and experiments. A width of 0.7 μm was found to be the optimal value for modulation operation.
Keywords
elemental semiconductors; integrated optoelectronics; micro-optics; microcavities; optical losses; optical modulation; p-i-n diodes; silicon; modulation operation; p-i-n diode; p-i-n intrinsic region; performance improvement; silicon microcavity modulators;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication (ECOC 2013), 39th European Conference and Exhibition on
Conference_Location
London
Electronic_ISBN
978-1-84919-759-5
Type
conf
DOI
10.1049/cp.2013.1388
Filename
6647581
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