Title :
Electron Energy Effects in B-Irrafdiated Power Semiconductor Devices
Author :
Fuochi, P.G. ; Martelli, A. ; Gombia, E. ; Malfatto, C. ; Passerini, B. ; Zambelli, M.
Author_Institution :
Istituto FRAE - CNR, Via de´´ Castagnoli 1, 40126 Bologna, Italy
Abstract :
Fast recovery power p-i-n diodes, obtained frorm ≪111≫ NTD float-zorne silicon, have been irradiated at room temperature with monoernergetic electrors at 6.6, 9.2 and 11.7 MeV. The absorbed doses ranged from 2 to 16 kG, Y The complex deep level spectra, revealed by DLTS measurements, have been related to the energy and dose values. The tradeoff between the static and the dynamic characteristics of the devices vs. the irradiation conditions have been investigated.
Keywords :
Electron beams; Energy measurement; Magnets; P-i-n diodes; PIN photodiodes; Power semiconductor devices; Semiconductor devices; Semiconductor diodes; Silicon; Temperature distribution;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
