• DocumentCode
    1940689
  • Title

    Electron Energy Effects in B-Irrafdiated Power Semiconductor Devices

  • Author

    Fuochi, P.G. ; Martelli, A. ; Gombia, E. ; Malfatto, C. ; Passerini, B. ; Zambelli, M.

  • Author_Institution
    Istituto FRAE - CNR, Via de´´ Castagnoli 1, 40126 Bologna, Italy
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    645
  • Lastpage
    648
  • Abstract
    Fast recovery power p-i-n diodes, obtained frorm ≪111≫ NTD float-zorne silicon, have been irradiated at room temperature with monoernergetic electrors at 6.6, 9.2 and 11.7 MeV. The absorbed doses ranged from 2 to 16 kG, Y The complex deep level spectra, revealed by DLTS measurements, have been related to the energy and dose values. The tradeoff between the static and the dynamic characteristics of the devices vs. the irradiation conditions have been investigated.
  • Keywords
    Electron beams; Energy measurement; Magnets; P-i-n diodes; PIN photodiodes; Power semiconductor devices; Semiconductor devices; Semiconductor diodes; Silicon; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1940689