DocumentCode
1940742
Title
Thermal management to avoid the collapse of current gain in power heterojunction bipolar transistors
Author
Liu, W.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1995
fDate
Oct. 29 1995-Nov. 1 1995
Firstpage
147
Lastpage
150
Abstract
One undesirable thermal phenomenon occurring in power heterojunction bipolar transistor is the collapse of current gain. This paper presents the electrical, electrical-thermal, thermal, and material approaches to avoid the collapse, and thus to improve the transistor output power.
Keywords
heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; thermal analysis; current gain; electrical-thermal approach; material approach; microwave transistors; power heterojunction bipolar transistors; thermal management; transistor output power; Contact resistance; Current distribution; Electronic ballasts; Energy management; Equations; Fingers; Heterojunction bipolar transistors; Power generation; Thermal management; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-2966-X
Type
conf
DOI
10.1109/GAAS.1995.528981
Filename
528981
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