Title :
Narrow linewidth Brillouin laser based on chalcogenide chip
Author :
Kabakova, Irina V. ; Pant, Ravi ; Choi, D.-Y. ; Debbarma, Sanjoy ; Madden, Steven J. ; Luther-Davies, Barry ; Eggleton, Benjamin J.
Author_Institution :
Sch. of Phys., Univ. of Sydney, Sydney, NSW, Australia
Abstract :
We demonstrate a narrow linewidth Brillouin ring-cavity laser based on chalcogenide photonic chip. The gain medium is a 7 cm-long As2S3 waveguide with a cross-section of 4μm × 850nm and the Brillouin gain coefficient of 0.7·10-9 m/W. The waveguides are equipped with vertical tapers so that the coupling loss is reduced. The lasing threshold is approximately PL=360 mW, almost 5 times lower than the calculated single-pass threshold P0=1.73 W in the same waveguide. The slope efficiency is found to be 30% and the linewidth of 100 kHz is measured using a self-heterodyne method.
Keywords :
arsenic compounds; integrated optics; laser cavity resonators; optical couplers; optical waveguides; ring lasers; As2S3; Brillouin gain coefficient; chalcogenide photonic chip; coupling loss; lasing threshold; narrow linewidth Brillouin laser; power 1.73 W; power 360 mW; ring-cavity laser; self-heterodyne method; size 7 cm; vertical tapers; waveguide;
Conference_Titel :
Optical Communication (ECOC 2013), 39th European Conference and Exhibition on
Conference_Location :
London
Electronic_ISBN :
978-1-84919-759-5
DOI :
10.1049/cp.2013.1410
