Narrow linewidth Brillouin laser based on chalcogenide chip

Author

Kabakova, Irina V. ; Pant, Ravi ; Choi, D.-Y. ; Debbarma, Sanjoy ; Madden, Steven J. ; Luther-Davies, Barry ; Eggleton, Benjamin J.

Author_Institution

Sch. of Phys., Univ. of Sydney, Sydney, NSW, Australia

fYear

2013

fDate

22-26 Sept. 2013

Firstpage

1

Lastpage

3

Abstract

We demonstrate a narrow linewidth Brillouin ring-cavity laser based on chalcogenide photonic chip. The gain medium is a 7 cm-long As₂S₃ waveguide with a cross-section of 4μm × 850nm and the Brillouin gain coefficient of 0.7·10^-9 m/W. The waveguides are equipped with vertical tapers so that the coupling loss is reduced. The lasing threshold is approximately P_L=360 mW, almost 5 times lower than the calculated single-pass threshold P₀=1.73 W in the same waveguide. The slope efficiency is found to be 30% and the linewidth of 100 kHz is measured using a self-heterodyne method.

Keywords

arsenic compounds; integrated optics; laser cavity resonators; optical couplers; optical waveguides; ring lasers; As₂S₃; Brillouin gain coefficient; chalcogenide photonic chip; coupling loss; lasing threshold; narrow linewidth Brillouin laser; power 1.73 W; power 360 mW; ring-cavity laser; self-heterodyne method; size 7 cm; vertical tapers; waveguide;

fLanguage

English

Publisher

iet

Conference_Titel

Optical Communication (ECOC 2013), 39th European Conference and Exhibition on

Conference_Location

London

Electronic_ISBN

978-1-84919-759-5

Type

conf

DOI

10.1049/cp.2013.1410

Filename

6647603