A novel structure of MOSFET array to measure off-leakage current with high accuracy

We developed a new test structure consisting of a MOSFET array that can accurately measure off-leakage current (Ioff). The features of this structure are that MOSFETs´ source and drain are directly connected to probing pads and that each pair of source and drain terminals is unshared to avoid Ioff contamination by untargeted MOSFETs. The structure is implemented in scribe lines for the 90 nm technology node and beyond, and the measurements of MOSFET characteristics for the array and non-array structures are well correlated.