Title :
A diaphragm based piezoelectric AlN film quality test structure
Author :
Jackson, Nathan ; Keeffe, Rosemary O. ; Leary, Robert O. ; Neil, Mike O. ; Waldron, Finbarr ; Mathewson, Alan
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Abstract :
Aluminum nitride (AlN) is becoming a commonly used piezoelectric material for various applications due to its compatibility with CMOS processing. However, the piezoelectric properties of AlN are highly dependent on the deposition process and the underlying layers, and typically require several test structures in order to determine the quality of the film. This paper highlights a MEMS based diaphragm test structure which allows various types of material characterization to be tested, in order to determine the quality of the AlN film on a bulk micromachined device wafer.
Keywords :
CMOS integrated circuits; III-V semiconductors; aluminium compounds; micromechanical devices; piezoelectric materials; piezoelectric thin films; semiconductor technology; wide band gap semiconductors; AlN; CMOS processing; MEMS based diaphragm test structure; aluminum nitride; bulk micromachined device wafer; deposition process; diaphragm based piezoelectric AlN film quality test structure; piezoelectric material; Diffraction; Irrigation; X-ray diffraction; Aluminum nitride; Di-aphragm; MEMS; Piezoelectrics;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1027-7
DOI :
10.1109/ICMTS.2012.6190612
