GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

Author

Liuan Li ; Kishi, Akinori ; Qiang Liu ; Itai, Yuki ; Fujihara, Ryota ; Ohno, Y. ; Jin-Ping Ao

Author_Institution

Inst. of Technol. & Sci., Univ. of Tokushima, Tokushima, Japan

Volume

2

Issue

6

fYear

2014

fDate

Nov. 2014

Firstpage

168

Lastpage

173

Abstract

GaN Schottky barrier diodes (SBDs) with low turn-on voltage are developed for microwave rectification. The diodes with reactively-sputtered TiN electrodes have a lower turn-on voltage compared with the diodes with Ni electrode, while the on-resistance, the reverse leakage current, and the reverse breakdown characteristics are comparable to each other. Theoretically, the SBDs with TiN electrodes can enhance the efficiency of a rectenna circuit at 2.45 GHz from 84% to 89% when the turn-on voltage decreases from 1.0 to 0.5 V.

Keywords

III-V semiconductors; Schottky diodes; electrodes; gallium compounds; leakage currents; microwave diodes; rectification; semiconductor device breakdown; titanium compounds; wide band gap semiconductors; GaN; SBDs; Schottky barrier diode; TiN; efficiency 84 percent to 89 percent; frequency 2.45 GHz; low turn-on voltage; microwave rectification; on-resistance; reactively-sputtered electrodes; reverse breakdown characteristics; reverse leakage current; turn-on voltage; Electrodes; Gallium nitride; Rectennas; Schottky barriers; Schottky diodes; Titanium compounds; Gallium nitride; Schottky barrier diode; microwave rectification; titanium nitride;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2014.2346395

Filename

6874492