Title :
High power AlGaAs/GaAs HBTs for Ka-band operation
Author :
Chang-Woo Kim ; Tanaka, S. ; Amamiya, Y. ; Furuhata, N. ; Shimawaki, H. ; Miyoshi, Y. ; Goto, N. ; Honjo, K.
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-/spl mu/m/sup 2/ emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-/spl mu/m/sup 2/ CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; thermal stability; 0.65 W; 0.8 W; 16 percent; 26 GHz; 34 percent; 5.6 dB; 6 dB; AlGaAs-GaAs; CW output power; Ka-band; collector efficiency; common-base HBT; linear power gain; power HBT; power-added efficiency; thermal stability; Fingers; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Power amplifiers; Power generation; Substrates; Thermal conductivity;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528984
