DocumentCode
1941536
Title
A novel compact CBCM method for high resolution measurement in 28nm CMOS technology
Author
Dia, Kin Hooi ; Tsao, Willy ; Chien, Cheng Hsing ; Zeng, Zheng
Author_Institution
MediaTek Inc., Hsinchu, Taiwan
fYear
2012
fDate
19-22 March 2012
Firstpage
119
Lastpage
121
Abstract
In this paper we present a Charged-Based Capacitance Measurement (CBCM) cell with an on-chip non-overlapping signal generation circuitry to reduce the number of probe pads, and to enable the test structure to operate at GHz range. Also, we describe the circuit design technique and measurement calibration to improve the resolution limit in 28 nm process node. These novel features combine to make it a very suitable for industrial applications for large amounts of accurate capacitance characterizations.
Keywords
CMOS integrated circuits; capacitance measurement; microprocessor chips; CBCM cell; CMOS technology; charged-based capacitance measurement; circuit design; compact CBCM method; high resolution measurement; measurement calibration; on-chip nonoverlapping signal generation circuitry; size 28 nm; CMOS integrated circuits; CMOS technology; Current measurement; Integrated circuit interconnections; Moment methods; Probes; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location
San Diego, CA
ISSN
1071-9032
Print_ISBN
978-1-4673-1027-7
Type
conf
DOI
10.1109/ICMTS.2012.6190619
Filename
6190619
Link To Document