Title :
A novel compact CBCM method for high resolution measurement in 28nm CMOS technology
Author :
Dia, Kin Hooi ; Tsao, Willy ; Chien, Cheng Hsing ; Zeng, Zheng
Author_Institution :
MediaTek Inc., Hsinchu, Taiwan
Abstract :
In this paper we present a Charged-Based Capacitance Measurement (CBCM) cell with an on-chip non-overlapping signal generation circuitry to reduce the number of probe pads, and to enable the test structure to operate at GHz range. Also, we describe the circuit design technique and measurement calibration to improve the resolution limit in 28 nm process node. These novel features combine to make it a very suitable for industrial applications for large amounts of accurate capacitance characterizations.
Keywords :
CMOS integrated circuits; capacitance measurement; microprocessor chips; CBCM cell; CMOS technology; charged-based capacitance measurement; circuit design; compact CBCM method; high resolution measurement; measurement calibration; on-chip nonoverlapping signal generation circuitry; size 28 nm; CMOS integrated circuits; CMOS technology; Current measurement; Integrated circuit interconnections; Moment methods; Probes; Transistors;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1027-7
DOI :
10.1109/ICMTS.2012.6190619
