Title :
A grid generation system for process and device simulation
Author :
Yajima, A. ; Jonishi, H. ; Maruyama, A.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A method for numerically generating boundary-fitted coordinate systems for arbitrarily shaped three-dimensional regions such as LOCOS (local oxidation of silicon) isolation regions, trench cells, or stacked capacitor cells for next-generation DRAMs is presented. The three-dimensional region of interest is decomposed into curve-bounded surfaces which are free-form surfaces defined by spline curves. Grid points for the surfaces are generated by the boundary-fitted coordinate method, which improves convergence and accuracy. The usefulness of this system is illustrated through a series of examples and applications in semiconductor process and device simulation.<>
Keywords :
circuit CAD; convergence of numerical methods; digital simulation; semiconductor device models; semiconductor technology; splines (mathematics); DRAMs; LOCOS isolation regions; Si local oxidation; accuracy; arbitrarily shaped three-dimensional regions; boundary-fitted coordinate systems; convergence; curve-bounded surfaces; device simulation; free-form surfaces; grid generation system; numerical generation; semiconductor process simulation; spline curves; stacked capacitor cells; trench cells; Difference equations; Geometry; Iterative algorithms; Mesh generation; Oxidation; Partial differential equations; Physics computing; Semiconductor process modeling; Shape; Solid modeling;
Conference_Titel :
Computer-Aided Design, 1988. ICCAD-88. Digest of Technical Papers., IEEE International Conference on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-8186-0869-2
DOI :
10.1109/ICCAD.1988.122475
