DocumentCode
1941568
Title
A DLTS Investigation of VPE GaAs MESFETs
Author
Ghezzi, C. ; Gombia, E. ; Mosca, R. ; Pillan, Margherita
Author_Institution
Dipartimento di Fisica dell´´Universita´´ di Parma, Via M. D´´Azeglio 85, 43100 Parma, Italy
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
859
Lastpage
862
Abstract
Capacitance DLTS measurements have been performed in VPE. GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semiinsulating substrates. A band of electron traps was detected near the metal (gate)-semiconductor interface. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra in samples prepared on Cr-doped substrates. The feature of this positive capacitance transient have been analyzed and discussed.
Keywords
Capacitance; Electron emission; Electron traps; Filling; Gallium arsenide; MESFETs; Signal processing; Space vector pulse width modulation; Spectroscopy; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436769
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