Title :
A DLTS Investigation of VPE GaAs MESFETs
Author :
Ghezzi, C. ; Gombia, E. ; Mosca, R. ; Pillan, Margherita
Author_Institution :
Dipartimento di Fisica dell´´Universita´´ di Parma, Via M. D´´Azeglio 85, 43100 Parma, Italy
Abstract :
Capacitance DLTS measurements have been performed in VPE. GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semiinsulating substrates. A band of electron traps was detected near the metal (gate)-semiconductor interface. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra in samples prepared on Cr-doped substrates. The feature of this positive capacitance transient have been analyzed and discussed.
Keywords :
Capacitance; Electron emission; Electron traps; Filling; Gallium arsenide; MESFETs; Signal processing; Space vector pulse width modulation; Spectroscopy; Transient analysis;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
